Trioctylphosphine oxide

Trioctylphosphine oxide
Identifiers
Abbreviations TOPO
CAS number 78-50-2 Y
PubChem 65577
ChemSpider 59020 Y
EC number 201-121-3
UN number 3077
MeSH Trioctyl+phosphine+oxide
RTECS number SZ1662500
Beilstein Reference 1796648
Jmol-3D images Image 1
Properties
Molecular formula C24H51OP
Molar mass 386.63 g mol−1
Exact mass 386.367752766 g mol-1
Appearance White, opaque crystals
Melting point

50-54 °C, 323-327 K, 122-129 °F

Boiling point

238 °C, 511 K, 460 °F (at 3 mmHg)

Hazards
EU classification Xi
R-phrases R38, R41
S-phrases S26, S39
NFPA 704
1
3
0
Flash point 110 °C
 Y (verify) (what is: Y/N?)
Except where noted otherwise, data are given for materials in their standard state (at 25 °C, 100 kPa)
Infobox references

Trioctylphosphine oxide is an organophosphorus compound with the formula OP(C8H17)3. Frequently referred to as TOPO, this compound is used as an extraction or stabilizing agent. It is an air-stable white solid at room temperature.

Preparation and use

TOPO is usually prepared by oxidation of trioctylphosphine, which in turn is produced by alkylation of phosphorus trichloride.

The main use of TOPO is in solvent extraction of metals, especially uranium. The high lipophilicity and high polarity are propertes key to this application. Its high polarity, which results from the dipolar phosphorus-oxygen bond, allows this compound to bind to metal ions. The octyl groups confer solubility in low polarity solvents such as kerosene.[1]

In the research laboratory, both trioctylphosphane and TOPO are frequently useful as a capping ligand for the production of quantum dots such as those consisting of CdSe. In these cases, TOPO serves as solvent for the synthesis and solubilizes the growing nanoparticles. TOPO-coated quantum dots are typically soluble in chloroform, toluene, and (to a lesser extent) hexane.

References

  1. ^ Watson, E. K.; Rickelton, W. A. "A review of the industrial and recent potential applications of trioctylphosphine oxide" Solvent Extraction and Ion Exchange 1992, volume 10, pp. 879-89. doi:10.1080/07366299208918141